▎ 摘　　要

NOVELTY - Controlling growth of number of graphene layer involves: providing a copper substrate, forming the first nickel layer on the copper substrate; injecting the substrate using the ion injection method in the nickel layer to form structure; annealing the structure such that a copper in the copper substrate into the nickel layer to form nickel-copper alloy, nickel layer so as to introduce a carbon by the copper in the nickel layer from the nickel layer, reconstructing a graphene in the nickel-copper alloy surface. USE - For controlling growth of number of graphene layer (claimed) in semiconductor industrial circles. ADVANTAGE - The obtained graphene thin film has good quality and large size. The method thus controls layer number, and it is easy to transfer. The ion implantation technology and annealing technology are very mature process in the semiconductor industry, where the number of layers can control method for growing graphene to quickly push the graphene. DETAILED DESCRIPTION - Controlling growth of number of graphene layer involves: providing a Cu substrate, forming the first Ni layer on the Cu substrate; injecting the substrate using the ion injection method in the Ni layer to form structure; annealing the structure such that a Cu in the Cu substrate into the Ni layer to form Ni-Cu alloy, nickel layer so as to introduce a C by the Cu in the Ni layer from the Ni layer, reconstructing a graphene in the Ni-Cu alloy surface. The Ni layer has a thickness of less than the thickness of the substrate. The thickness of the Ni layer is 10 nm to 2 mu m. The Ni layer is prepared by electron beam evaporation method, magnetron sputtering method or plating method.