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  • 专利标题:   Wiring structure for electronic device comprises conductive material layer and nanocrystalline graphene layer.
  • 专利号:   US2015235959-A1, KR2015098180-A, WO2015126139-A1, EP3108501-A1, CN106233453-A, EP3108501-A4
  • 发明人:   LEE C, SHIN H, PARK S, IM D, PARK H, SHIN K, LEE J, LIM H, LEE C S, SHIN H J, PARK S J, IM D H, SHIN K W, LEE J M, LIM H J, PIAO X
  • 专利权人:   LEE C, SHIN H, PARK S, IM D, PARK H, SHIN K, LEE J, LIM H, SAMSUNG ELECTRONICS CO LTD
  • 国际专利分类:   H01L023/532, H01L027/108, C01B031/04, H01L021/768
  • 专利详细信息:   US2015235959-A1 20 Aug 2015 H01L-023/532 201558 Pages: 21 English
  • 申请详细信息:   US2015235959-A1 US625282 18 Feb 2015
  • 优先权号:   KR019211, KR149331, WOKR001595

▎ 摘　　要

NOVELTY - A wiring structure (10) comprises 1st conductive material layer (30) and nanocrystalline graphene layer (50). USE - A wiring structure for electronic device (claimed). ADVANTAGE - Wiring structure has reduced specific resistance and thickness, excellent electrical characteristics, and high adhesive strength. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for electronic device comprising transistor, capacitor, resistor, and wiring structure. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic cross-sectional view of wiring structure. Wiring structure (10) Conductive material layer (30) Nanocrystalline graphene layer (50)