▎ 摘　　要

NOVELTY - Light-emitting diode communication device comprises conductive metal bonding layer (2), metal reflecting layer (3), n-type gallium nitride layer (4), an i-gallium nitride layer (5), a p-type gold nitrate layer, multi-quantum well layer and an insulating layer sequentially connected from bottom to top. The Light-emitting diode further comprises an N electrode and a P electrode (11). The N electrode passes through the n-graphene-1 layer to form an ohmic contact with the n gallium nitride-2 layer, and the P electrode and the p-guitar layer are electrically conducted. USE - Used as a light-emitting diode communication device for a visible light communication (VLC) system, and as an ideal light source in the field of visible light communications. ADVANTAGE - The LED is capable of providing more holes for the p-type gallium nitride layer while detecting the UV light, improving the carrier injection efficiency, realizing the more balanced carrier concentration, which is good for lifting carrier composite efficiency, which can be used in the field of visible light communication. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a method for preparing light-emitting diode communication device for optical communication. DESCRIPTION OF DRAWING(S) - The drawing shows a structural sectional view of LED chip for visible light communication and. 1Conductive substrate 2Metal bonding layer 3Metal reflection layer 4N-type gallium nitride 5I-gallium nitride layer 6P-type gallium nitride layer 8N-type gallium nitride 9Insulating layer 10N electrode 11P electrode