▎ 摘　　要

NOVELTY - Graphene nanoribbon (620) is 2,12-bis(anthracen-9-yl)-6,16-dithiapentacyclo(11.7.0.03,11.05,9.015,19)icosa-1,3,5(9),7,10,12,14,17,19-nonaene-based compound (I) or 2,12-bis(anthracen-9-yl)-6,18-dithiapentacyclo(11.7.0.03,11.05,9.015,19)icosa-1,3,5(9),7,10,12,14,16,19-nonaene-based compound (II). USE - Graphene nanoribbon is used as channel for semiconductor device (claimed) e.g. transistor e.g. metal-oxide semiconductor field-effect transistor, top gate-type field-effect transistor or tunnel field-effect transistor and Schottky barrier diode. Can also be used for high-frequency device. ADVANTAGE - The graphene nanoribbon has high carrier mobility and desired bandgap width, and provides Schottky barrier diode having excellent diode characteristics. DETAILED DESCRIPTION - Graphene nanoribbon is 2,12-bis(anthracen-9-yl)-6,16-dithiapentacyclo(11.7.0.03,11.05,9.015,19)icosa-1,3,5(9),7,10,12,14,17,19-nonaene-based compound of formula (I) or 2,12-bis(anthracen-9-yl)-6,18-dithiapentacyclo(11.7.0.03,11.05,9.015,19)icosa-1,3,5(9),7,10,12,14,16,19-nonaene-based compound of formula (II).n = integer. INDEPENDENT CLAIMS are included for the following: (1) a graphene nanoribbon precursor, which is 2,12-bis(anthracen-9-yl)-6,16-dithiapentacyclo(11.7.0.03,11.05,9.015,19)icosa-1,3,5(9),7,10,12,14,17,19-nonaene compound of formula (A1) or 2,12-bis(anthracen-9-yl)-6,18-dithiapentacyclo(11.7.0.03,11.05,9.015,19)icosa-1,3,5(9),7,10,12,14,16,19-nonaene compound of formula (A2); and (2) preparation of graphene nanoribbon, which involves polymerizing the graphene nanoribbon precursor. X = I or B;and Y' = H or halo. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the top gate-type field-effect transistor as the semiconductor device. Semiconductor device (600) Support substrate (610) Graphene nanoribbon (620) Electrodes (630a,630b) Gate insulating film (640)