▎ 摘　　要

NOVELTY - The method involves depositing a metal catalyst layer on an inner wall surface of a hole channel of mesoporous silicon dioxide by using an atomic layer deposition technology. The mesoporous silicon dioxide is dispersed in an organic solvent to obtain a dispersion liquid. The dispersion liquid is prepared into a film. The film is taken as a template. Chemical vapor deposition process is performed to prepare a graphene nanowire. The graphene nanowire is dispersed into another organic solvent to obtain a film-forming liquid. The film-forming liquid is coated on a surface of a base plate to obtain a graphene conductive film. USE - Method for preparing a graphene conductive film of a thin film transistor in a display device (all claimed). ADVANTAGE - The method enables preparation of graphene conductive film with excellent transparency and physical performance, and is suitable for mass production. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic flowchart of the method for preparing graphene conductive film (Drawing includes non-English language text).