▎ 摘　　要

NOVELTY - Base component comprising support layer, separation layer formed on support layer, and catalyst metal layer formed on separation layer, is transferred into chamber, carbon vapor source is passed into the chamber to increase the internal temperature of the chamber, and then, base component is cooled, to form graphene layer. The ratio of maximum temperature (Tc) of support layer in chamber, and melting temperature (Tmp) of support layer is less than 0.6. USE - Manufacture of graphene. ADVANTAGE - The method provides graphene having high quality and productivity.