▎ 摘　　要

NOVELTY - The sensor has a dielectric layer adhered on a groove that is formed on a silicon substrate. The silicon substrate is provided with a gate electrode that is fixed with the dielectric layer. The gate electrode is inserted into the groove. Two ends of a source electrode are fixed with a graphene layer. The graphene layer is adhered on a top surface of the silicon substrate. The silicon substrate is provided with a drain electrode, where voltage is applied on the drain electrode from outside. The silicon substrate is provided with a silicon oxide film. USE - Ultra-high sensitive graphene sensor. ADVANTAGE - The sensor ensures better working performance and high sensitivity. The sensor realizes control of charge quantity of a graphene surface, so that responsivity of the sensor can be appropriately tuned and gaseous species can be absorbed. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for an ultra-high sensitive graphene sensor manufacturing method. DESCRIPTION OF DRAWING(S) - The drawing shows a top perspective view of an ultra-high sensitive graphene sensor.