▎ 摘　　要

NOVELTY - Preparation of structured graphene on silicon carbide (SiC) substrate based on nickel (Ni) film annealing involves cleaning SiC sample sheet, depositing layer of silicon dioxide (SiO2) on surface by plasma enhanced chemical vapor deposition (PECVD) to obtain SiO2 mask, coating photoresist layer, etching window on mask, connecting device on quartz tube, heating three-necked flask filled with carbon tetrachloride (CCl4) at 60-80 degrees C, passing argon gas to generate dual-layer carbon film on sample sheet, depositing nickel (Ni) film, passing argon gas on sample sheet and annealing. USE - The method is useful for preparing structured graphene on SiC substrate (claimed) for preparing microelectronic device. ADVANTAGE - The structured graphene has smooth surface, good continuity and low porosity. The method is simple and highly safe. DETAILED DESCRIPTION - Preparation of structured graphene on SiC substrate based on Ni film annealing comprises: (A) cleaning SiC sample sheet and removing dirt on surface; (B) depositing layer of SiO2 on surface by PECVD to obtain SiO2 mask having thickness of 0.4-1.2 mu m; (C) coating photoresist layer on mask, etching window on mask where shape of window is the same with shape of substrate of device and exposing SiC for forming structured pattern; (D) positioning sample sheet opened with the window in quartz tube, connecting device on quartz tube and heating at 750-1150 degrees C; (E) heating three-necked flask filled with CCl4 at 60-80 degrees C and passing argon gas in three-necked flask at flow rate of 40-90 mL/minute to carry CCl4 vapor into quartz tube; (F) reacting CCl4 with SiC for 20-100 minutes to generate dual-layer carbon film on sample sheet; (G) positioning dual-layer carbon film in hydrofluoric acid buffer solution to remove remaining SiO2 and depositing Ni film having thickness of 350-600 nanometers; and (H) positioning sample sheet with Ni film, passing argon gas on sample sheet at flow rate of 20-100 mL/minute, annealing at 900-1100 degrees C for 10-20 minutes to generate dual-layer structured graphene at window position and removing Ni film.