▎ 摘　　要

NOVELTY - The transistor has a gate electrode (120) separated on a flexible substrate (110). A source electrode (110) is connected to a bottom electrode (111). A patterned graphene layer (112) is formed along vertical direction of the bottom electrode. An organic semiconductor channel region (130) is formed on the source electrode. A drain electrode (140) is connected to the organic semiconductor channel region and a flexible substrate and formed along vertical direction of the source electrode. An insulator layer (150) is formed between the gate electrode and an organic semiconductor channel region. USE - Highly efficient and low voltage graphene-organic semiconductor vertical transistor. ADVANTAGE - The transistor performs schottky barrier control process so as to effectively control Schottky barrier by utilizing a high electric capacity polyelectrolyte insulator, implement Schottky barrier controllability above 0.8 eV, enhance mechanical property of a soft transistor element, and implement a logic circuit through the p-type and n-type doping. DETAILED DESCRIPTION - The graphene layer is a monolayer. The flexible substrate is made of polyethyl(3)ene terephthalate, poly dimethyl siloxane, polycarbonate, polyethersulfone, polyimide, polyacrylate, polyester, polyvinyl, polycarbonate, polyethylene, and polyethylene naphthalate. The organic semiconductor channel region is made of organic semiconductor material, which is selected from phthalocyanine, pentacene,cene, anthracene, naphthalene, alpha -6- thiophene, alpha -4- thiophene, fullerene, parylene and parylene derivatives, rubrene and rubrene derivatives, coronene and coronene derivatives, perylene package carboxylic diimide and perylene package carboxylic diimide derivatives, perylene package carboxylic di-anhydride and perylenepackage carboxylic di-anhydride derivatives, polythiophene and polythiophene derivatives, polyparaphenylenevinylene and polyparaphenylenevinylene derivatives, polyfluorene and polyfluorene derivatives, polythiophenevinylene and polythiophenevinylene derivatives, polythiophene-hetero ring aromatic copolymer and polythiophene-hetero ring aromatic copolymer derivatives, oligoacene and oligoacene derivative of naphthalene, oligo-thiophene and oligo-thiophene derivative of the alpha -5- thiophene, pyromellitic dianhydride and pyromellitic dianhydride derivatives, and phyromelitic diimide and phyromelitic diimide derivative. The insulator layer is made of ion gel polymer electrolyte, which is selected from polymer, polystyrene, polyethylene oxide, polyethyleneimine, and polymethyl methacrylate. The bottom electrode, and the gate electrode and drain electrode are made of metal, which is selected from silver, aluminum, platinum, gold, copper, nickel, palladium, molybdenum, and calcium. An INDEPENDENT CLAIM is also included for a graphene - organic semiconductor vertical transistor manufacturing method. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of a highly efficient and low voltage graphene-organic semiconductor vertical transistor. Flexible substrate (110) Bottom electrode (111) Patterned graphene layer (112) Gate electrode (120) Organic semiconductor channel region (130) Drain electrode (140) Insulator layer (150)