▎ 摘　　要

NOVELTY - The element (100) has a metal holder (110) whose side is formed with a slot. An emitter plate (120) is inserted into the slot. A graphene emitter (122) is adhered on an emitter supporting unit (121). An insulating layer (130) is provided with a gate electrode (140). A gate supporting unit (141) is supported with a graphene gate (142). A metallic film is fixed on the emitter plate. The graphene emitter is adhered on a metal mesh. A gate hole (141a) is formed on the gate supporting unit. An anode electrode (150) is arranged in an upper portion of the gate electrode. USE - Electron-emissive element. ADVANTAGE - The element can fix the graphene emitter in an edge of the emitter plate in the metal holder, so that field enhancement factor of the element can be maximized. The element simplifies manufacturing process of the emitter plate and the gate electrode. The element is simple in structure and convenient to use. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are also included for the following: (1) a method for manufacturing an electron-emissive element (2) an electron-emissive element array. DESCRIPTION OF DRAWING(S) - The drawing shows an exploded perspective view of an electron-emissive element. Electron-emissive element (100) Metal holder (110) Emitter plate (120) Emitter supporting unit (121) Graphene emitter (122) Insulating layer (130) Gate electrode (140) Gate supporting unit (141) Gate hole (141a) Graphene gate (142) Anode electrode (150)