▎ 摘　　要

NOVELTY - The method involves forming a silicon-carbon alloy structure by selective epitaxy of a silicon-carbon alloy on surfaces of a semiconductor fin. A planarization dielectric layer is deposited around the silicon-carbon alloy structure and above an insulator layer. A horizontal portion of the silicon-carbon alloy structure is removed, where a vertical portion of the silicon-carbon alloy structure constitutes a silicon-carbon alloy fin. A set of contiguous physically exposed surface portions of the silicon-carbon alloy fin is converted into a graphene layer (70D) by an anneal process. USE - Method for forming a silicon-carbon alloy structure. ADVANTAGE - The method enables allowing surface orientations of the silicon-carbon alloy fins to induce formation of thicker sidewall portions of the graphene layers with respect to the horizontal portions of the graphene layers so as to reduce electrical contacts to source and drain regions. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a semiconductor structure. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of a silicon-carbon alloy structure along a vertical plane C-C'. Substrate (10, 20) Silicon carbon alloy fin (40) Graphene layer (70D) Drain contact structure (78D)