• 专利标题:   Optoelectronic device e.g. switch device and sensor device used for electronic and photonic devices, consists of layers of graphene, and layers of molybdenum sulfide film deposited on substrate, and has hetero-hybrid structure.
  • 专利号:   WO2014178016-A2, WO2014178016-A3
  • 发明人:   ROY K, PADMANABHAN M, GHOSH A
  • 专利权人:   INDIAN INST SCI
  • 国际专利分类:   H01L031/0264, G11C011/42, G11C013/04, G11C016/18
  • 专利详细信息:   WO2014178016-A2 06 Nov 2014 H01L-031/0264 201478 Pages: 29 English
  • 申请详细信息:   WO2014178016-A2 WOIB061118 30 Apr 2014
  • 优先权号:   INCH01963

▎ 摘  要

NOVELTY - An optoelectronic device consists of one or more layers of graphene, and one or more layers of molybdenum sulfide film deposited on a substrate (A). The optoelectronic device has a hetero-hybrid structure formed by providing graphene layer on molybdenum sulfide films. The graphene is transferred on the top of molybdenum sulfide in a continuous sheet forming the in-plane geometry. USE - Optoelectronic device e.g. switch device, sensor device, and memory device (all claimed) is used for electronic and photonic devices e.g. high-mobility transistor, solid-state laser, light-emitting device, and solar cell. ADVANTAGE - The optoelectronic device has excellent light sensitivity, gate tunability, and optical transparency, and controllable electrical properties. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for optoelectronic device development method.