▎ 摘　　要

NOVELTY - The method involves obtaining dispersion liquid of graphite oxide under the room temperature by precipitate dispersion. The dispersion liquid is provided for processing dispersion of glass at a temperature 60 - 80 degrees C for 15-20 minutes. The oxidized graphite thin film is formed on glass surface. The processing of glass sheet is performed in a container filled with hydrazine hydrate. The sealing film is added in the container under 90 - 100 degrees C temperature for 12 - 24 hours to obtain graphene transparent conductive thin film on glass surface of silicon wafer. USE - Lifting method for preparing graphene transparent conductive thin film on silicon wafer. ADVANTAGE - The graphene transparent conductive thin film is simple in structure. The high yield of graphene transparent conductive thin film can be achieved. The transmittance of the film is high. The uniform distribution and high stability of the graphene transparent conductive thin film can be achieved. DESCRIPTION OF DRAWING(S) - The drawing shows graphene transparent conductive film Raman spectra.