▎ 摘　　要

NOVELTY - Production of substituted anthracene compound (III) involves (i) converting amino group of anthracene-1,4,5,8-tetramine compound (I) comprising a group (Z') in which bond energy with carbon atom of aromatic ring increases and an amino group into a group (Y') in which bond energy with carbon atom of aromatic ring increases to obtain an anthracene compound (II), and (ii) converting a hydrogen atom bonded to a carbon atom of an aromatic ring of the compound (II) into group (X') in which bond energy with carbon atom of aromatic ring increases to obtain compound (III). USE - Production of substituted anthracene compound used as precursor for producing graphene nanoribbons (claimed) used for high-performance semiconductor device e.g. transistor for high-speed, high-performance electronic device. ADVANTAGE - The substituted anthracene compound enables simple and stable production of graphene nanoribbons having prescribed length and width. The graphene nanoribbons have desired high carrier (electron and hole) mobility even at room temperature, unique electronic property, such as ballistic conduction and half-integer quantum Hall effect, and reduced contact resistance with electrode. DETAILED DESCRIPTION - Production of substituted anthracene compound of formula (III) involves (i) converting amino group of anthracene-1,4,5,8-tetramine compound of formula (I) comprising a group (Z') in which bond energy with carbon atom of aromatic ring increases and an amino group into a group (Y') in which bond energy with carbon atom of aromatic ring increases to obtain an anthracene compound of formula (II), and (ii) converting a hydrogen atom bonded to a carbon atom of an aromatic ring of the compound (II) into group (X') in which bond energy with carbon atom of aromatic ring increases to obtain compound (III). =1-3; t=0-4;and X',Y',Z'=group in which bond energy with carbon atom of aryl increases in the order of C-X' bond, C-Y' bond and C-Z' bond. An INDEPENDENT CLAIM is included for production of graphene nanoribbons, which involves (ia) performing mutual elimination of groups (X') of the compound (III) and bonding carbon atoms of the aromatic rings from which the groups (X') are eliminated to obtain tridecacyclo29.5.3.12,6.116,20.121,25.08,13.012,17.015,36.027,32.035,39.014,42.033,40.034,41dotetraconta-1(36),2(42),3,5,7,9,11,13,15,17,19,21,23,25,27,29,31,33(40),34(41),35(39),37-henicosaene polymer of formula (IV), and (ib) performing mutual elimination of groups (Y') of the polymer (IV) and bonding carbon atoms of the aromatic rings from which the groups (Y') are eliminated to obtain tridecacyclo29.5.3.12,6.116,20.121,25.08,13.012,17.015,36.027,32.035,39.014,42.033,40.034,41dotetraconta-1(36),2(42),3,5,7,9,11,13,15,17,19,21,23,25,27,29,31,33(40),34(41),35(39),37-henicosaene polymer of formula (V). n=degree of polymerization. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view explaining manufacture of semiconductor device. 110Insulating substrate 120Metal layer 121Wide region 122Narrow region