▎ 摘　　要

NOVELTY - The utility model claims a graphene auxiliary GaN rectifier. The rectifier comprises an epitaxial wafer, a primary Schottky electrode and a primary ohmic electrode respectively set on two sides of the upper surface of the epitaxial wafer and not interconnected, a graphene layer set above the primary Schottky electrode and the primary ohmic electrode, a metal layer set on the graphene layer, a Schottky metal layer set on the Schottky electrode part metal layer, a patterned passivation layer set on the ohmic electrode graphene layer upper metal layer and Schottky electrode part Schottky metal layer; a top electrode layer set at the pattern passivation layer opening; the Schottky metal layer exposes the primary Schottky electrode; the graphene layer and the metal layer above the primary Schottky electrode are exposed in all areas of the air. The rectifier of the utility model can reduce the high-frequency working thermal breakdown frequency of the GaN rectifier and effectively enhance the electrode current expanding capability of the GaN rectifier.