▎ 摘　　要

NOVELTY - Perovskite/gallium-arsenic (GaAs) single-junction hybrid solar cell comprises back electrode, n-type doped gallium arsenide layer, perovskite layer, graphene layer and front electrode which are sequentially stacked from bottom to top. The perovskite layer comprises masurium (Ma)-tin (Sn)0.5-lead (Pb)0.5-iodide (I)3, MaSnI3, cesium (Cs)SnI2-bromine (Br). USE - Perovskite/GaAs single-junction hybrid solar cell ADVANTAGE - The perovskite/GaAs single-junction hybrid solar cell has anti-irradiation performance, high conversion efficiency, adjustable band gap and high starting voltage, reduces carrier composite and manufacturing cost, and improves short circuit current and conversion efficiency. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for preparing perovskite/GaAs single-junction hybrid solar cell, which involves: a. evaporating back electrode on one surface of n-type doped gallium-arsenic (GaAs) substrate, and carrying out annealing treatment to obtain back electrode/n-type doped GaAs substrate; b. spin-coating a perovskite precursor solution on other surface of n-type doped GaAs substrate, carrying out annealing treatment to form perovskite layer, other surface of the n-type doped GaAs substrate is opposite to the surface for preparing the back electrode; c. transferring graphene onto perovskite layer; and d. preparing a front electrode on graphene layer. DESCRIPTION OF DRAWING(S) - The drawing shows schematic view of perovskite/GaAs single-junction hybrid solar cell. Back electrode (1) N-type doped gallium arsenide layer (2) Perovskite layer (3) Graphene layer (4) Front electrode (5)