▎ 摘　　要

NOVELTY - The manufacturing method involves forming a pair of graphene electrodes (118,120) on the surface of a substrate (102), and separating the graphene electrodes by the exposed area of substrate. A solution (122) containing at least one carbon nanotube (124) is deposited on the surface of the substrate, and covers the graphene electrodes. Electric field (130) is generated across the graphene electrodes, and forces the carbon nanotubes to the exposed area of the substrate, which that the carbon nanotubes are aligned between the graphene electrodes in a direction parallel with the electric field. USE - Method of manufacturing carbon nanotube of semiconductor device (claimed) e.g. nanotube-based transistor. ADVANTAGE - Predefined arrangement of carbon nanotube arrays on the substrate is allowed through the pattern of graphene electrodes. Control of overall arrangement of the nanotubes is improved since the distance and pitch between carbon nanotubes is set according to distance between the teeth-like units of the graphene electrode. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a semiconductor device. DESCRIPTION OF DRAWING(S) - The drawing shows the schematic cross sectional view of the semiconductor device with the carbon nanotubes arranged according to electric field induced in response to applying electrical voltage and ground source to the graphene electrodes. Substrate (102) Graphene electrodes (118,120) Solution (122) Carbon nanotube (124) Electric field (130)