▎ 摘　　要

NOVELTY - A semiconductor device (110) has n-type semiconductor layer (11) containing diamond, electrode (40) containing portion (41), intermediate layer (30) containing specific carbide, graphite, graphene and/or amorphous carbon, and p-type semiconductor layer (12) containing diamond. The intermediate layer has region (31) provided between portion (41) and layer (11), and region (32) provided at periphery of region (31) when projected onto flat surface perpendicular to the direction from layer (11) towards electrode (40), without overlapping portion (41). USE - Semiconductor device e.g. power device, high frequency device, ultraviolet light device, and electron emitter. ADVANTAGE - The semiconductor device has improved high voltage resistance. DETAILED DESCRIPTION - A semiconductor device has n-type semiconductor layer containing diamond, electrode (I) containing portion (I), intermediate layer containing carbide, graphite, graphene and/or amorphous carbon, and p-type semiconductor layer containing diamond. The carbide contains titanium, silicon, aluminum, tungsten, nickel, chromium, calcium, lithium, ruthenium, molybdenum, zirconium, strontium, cobalt, rubidium, potassium, copper and/or sodium. The intermediate layer has region (I) provided between portion (I) and n-type semiconductor layer, and region (II) which is provided at the periphery of region (I) when projected onto flat surface perpendicular to the direction from the n-type semiconductor layer towards electrode (I), without overlapping portion (I). An INDEPENDENT CLAIM is included for manufacture of semiconductor device. DESCRIPTION OF DRAWING(S) - The drawing shows the sectional view of the semiconductor device. Semiconductor layer (11,12) Intermediate layer (30) Regions (31,32) Electrodes (40,50) Portion (41,42) Semiconductor device (110)