• 专利标题:   Graphene-phase change material structure comprises a phase change material layer, and a graphene layer is arranged on the top or bottom of the phase change material layer.
  • 专利号:   CN111725396-A
  • 发明人:   SONG Z, SONG W, ZHAO J, WU T
  • 专利权人:   SHANGHAI INST MICROSYSTEM INFORMATION
  • 国际专利分类:   H01L027/24, H01L045/00
  • 专利详细信息:   CN111725396-A 29 Sep 2020 H01L-045/00 202089 Pages: 7 Chinese
  • 申请详细信息:   CN111725396-A CN10061426 19 Jan 2020
  • 优先权号:   CN10061426

▎ 摘  要

NOVELTY - Graphene-phase change material structure comprises a phase change material layer (101). A graphene layer (102) is arranged on the top or bottom of the phase change material layer. USE - Graphene-phase change material structure. ADVANTAGE - The graphene-phase change material structure is not easy to diffuse and has good thermal stability. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following: (1) a method for preparing graphene-phase change material structure which involves preparing a phase change material layer; preparing a graphene layer on the surface of the phase change material layer; (2) a memory unit, which comprises a first electrode layer, a second electrode layer and the graphene-phase change material structure, the graphene-phase change material structure layer is located on top of the first electrode layer, the second electrode layer is located on the top of the graphene-phase change material structure; and (3) a method for preparing a memory cell, which involves preparing a first electrode layer; preparing a graphene-phase change material structure layer on the top surface of the first electrode layer; preparing a second electrode layer on the surface of the graphene-phase change material structure layer. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of an graphene-phase change material structure. Phase change material layer (101) Graphene layer (102)