▎ 摘　　要

NOVELTY - The detection chip has a wide band gap semiconductor, which is used to prepare UV detectors, which are used to detect UV radiation. A temperature sensor is configured on the wide bandgap semiconductor, and the temperature sensor is made of a temperature sensitive material and is used to detect the temperature of the wide bandgap semiconductor. The temperature sensitive material is graphene oxide. The wide band gap semiconductor includes a substrate material (1) and a wide band gap semiconductor film arranged on the substrate material, and the wide band gap semiconductor film includes a first epitaxial layer (2) and a second epitaxial layer (3). USE - Detection chip. ADVANTAGE - The detection chip utilizes the temperature-sensitive characteristics of reduced graphene oxide and benefits of abundant raw materials, low cost, and simple process, and at the same time utilizes the benefits of wide-bandgap nitride semiconductors for UV radiation detection. The real-time junction temperature detection function and the monolithic integration of UV detection and temperature detection are realized during the working process of the nitride UV detector. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a preparation method of the detection chip. DESCRIPTION OF DRAWING(S) - The drawing shows a cross sectional view of the detection chip. Substrate material (1) First epitaxial layer (2) Second epitaxial layer (3) Pair of first electrode (5) Pair of second electrode (6)