▎ 摘　　要

NOVELTY - A silicon carbide substrate recycling method involves preparing a graphene layer on the silicon carbide substrate to form a first silicon carbide composite substrate, growing a first epitaxial layer on the first silicon carbide composite substrate, separating the first epitaxial layer from the first silicon carbide composite substrate to obtain a second epitaxial layer and a second substrate and performing surface treatment on the separated second substrate to obtain a recyclable silicon carbide liner bottom. USE - Method for recycling silicon carbide substrate. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a method of manufacturing a gallium nitride high-electron-mobility transistor device.