▎ 摘　　要

NOVELTY - The device has a lower electrode (220) placed on an insulating substrate (210) e.g. solid silicon substrate and polyethersulfone substrate. An electron channel layer (230) e.g. graphene oxide thin film, is placed on the lower electrode by using graphene oxide. An upper electrode (240) is placed on the electron channel layer. A glue layer or a monomolecular layer is placed between the substrate and the lower electrode by surface treatment. The upper electrodes and the lower electrode are arranged to cross each other. The electron channel layer contacts with the lower electrode. USE - Graphene oxide memory device e.g. aluminum/graphene oxide/aluminum/polyethersulfone memory device. ADVANTAGE - The upper electrode is placed on the electron channel layer, so that the device can be switched between a high conductive state and a low conductive state according to an external voltage applied to the device such that size of the device is reduced, non-uniformity between the devices can be prevented by using uniform nanoparticles, so as to enhance good characteristics of the device. The uniform graphene oxide thin film is used an organic material/metal nanoparticle layer/organic material structure, so that non-uniformity can be prevented in device. DETAILED DESCRIPTION - The graphene oxide comprises an epoxide functional group, an alcohol functional group, a hydroxyl functional group, or a carboxyl functional group, so as to be dispersed in a solution or water-soluble solvent in a form of a monomolecular layer. An INDEPENDENT CLAIM is also included for a method for fabricating a graphene oxide memory device. DESCRIPTION OF DRAWING(S) - The drawing shows a perspective view of a graphene oxide memory device. Insulating substrate (210) Lower electrodes (220) Electron channel layer (230) Upper electrodes (240)