▎ 摘　　要

NOVELTY - The circuit has a three-terminal negative differential resistance device (110) which is included with a gate (112), a graphene channel (116) and source and drain electrodes (118a,118b). The source and drain electrodes are arranged to contact the graphene channel. A gate voltage source is provided to modulate the gate voltage on the gate, such that the electric current through the graphene channel exhibits negative differential resistance. USE - Circuit such as amplifier circuit, oscillator circuit, mixer circuit, impedance cancellation circuit, memory circuit and logic circuit (all claimed). ADVANTAGE - The characteristics of the negative differential resistance device can be controlled conveniently by using the gate voltage and the flexibility in design of the circuit can be achieved. The operating performance can be improved and the manufacturing cost can be reduced effectively. The planar structure of graphene makes the circuit to be compatible with wafer-scale processes, so as to facilitate the integration with existing semiconductor microelectronics. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for operating circuit. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the negative differential resistance device with the front-gate configuration. Substrate (105) Three-terminal negative differential resistance device (110) Gate (112) Graphene channel (116) Source and drain electrodes (118a,118b)