▎ 摘　　要

NOVELTY - The graphene FET (GFET) (200) has a gate layer (202a) coupled to a first graphene sheet (206a) to influence electric field within the first graphene sheet. A top surface of the gate layer is even with a top surface of one of a source contact (210) and a drain contact (212) formed on the first graphene sheet. A second graphene sheet (206b) is coupled to the top surface of the gate layer and the top surface of the one of the source contact and the drain contact opposite to the gate layer. The gate layer is adapted to influence electric field of the second graphene sheet. USE - GFET such as single-layer GFET and double-layer GFET. ADVANTAGE - The GFET is provided with the second graphene sheet, so that performance characteristic of the GFET can be enhanced while maintaining footprint of the GFET at a substrate i.e. silicon substrate, without enlarging a surface area required by the GFET at the substrate. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a gate region of a transistor. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of a GFET including multiple stacked graphene sheets. GFET (200) Gate layer (202a) Graphene sheets (206a, 206b) Source contact (210) Drain contact (212)