▎ 摘　　要

NOVELTY - The method involves growing a n-type -Ga2O3 texture film on a substrate by two-step hydrothermal method. High temperature annealing process is performed on a graphene or carbon nano-tube or metal Ni/Au film top electrode assembly to obtain a Ga2O3 base Schottky diode unit. An ultra-thin 63Ni radiation source film is attached on the Ga2O3 Schottky diode unit to obtain a wide bandgap oxide Schottky junction beta radiation volt nuclear battery. USE - Wide bandgap oxide Schottky junction beta nuclear battery unit preparation method ADVANTAGE - The beta radiation volt nuclear battery provides reliable power supply which can continuously supply power without depending on external input energy. The method realizes wide energy band semiconductor energy band structure control by doping metal element, by using surface active agent to adjust the growth state of the wide gap semiconductor, realizing the growth shape control and band structure of the semiconductor. DESCRIPTION OF DRAWING(S) - The drawing shows an SEM image of a n-type Ga2O3 texture film.