▎ 摘　　要

NOVELTY - Module comprises a heat conductive substrate (1), a guide plate (2), a thin film integrated crystal grain (3), a crystal grain locator (4) and a heat insulating filling medium (5). The heat conductive substrate is provided with an outer elastic heat conducting layer on the outside and a ceramic substrate on the inside. The guide plate is located inside the heat conductive substrate and a metal substrate. The thin film integrated crystal grain is located inside the guide plate and is provided with a semiconductor thin film. A metal deposition layer A of the guide plate corresponds to the metal deposition layer B and is in contact with the metal deposition layer B of the thin film integrated crystal grain. The crystal grain locator provides positioning for the horizontal direction of the thin film integrated crystal grain and the heat insulating filling medium is used to fill all the voids inside the module and realize the protection and positioning of the internal structure. USE - Used as medium-high temperature semiconductor thermoelectric conversion module based on film integrated crystal grain. ADVANTAGE - The module realizes high-efficiency direct thermoelectric conversion under medium and high temperature conditions and can ensure stable operation in the temperature lifting process. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic representation of the medium-high temperature semiconductor thermoelectric conversion module based on film integrated crystal grain. Heat conductive substrate (1) Guide plate (2) Thin film integrated crystal grain (3) Crystal grain locator (4) Heat insulating filling medium (5)