• 专利标题:   Halo-doped double-heterojunction material graphene strip has source electrode and drain electrode which are respectively provided with same length of source region and drain region.
  • 专利号:   CN103227204-A, CN103227204-B
  • 发明人:   WANG W, XIA C, XIAO G
  • 专利权人:   UNIV NANJING POSTS TELECOM
  • 国际专利分类:   H01L029/36, H01L029/49, H01L029/78
  • 专利详细信息:   CN103227204-A 31 Jul 2013 H01L-029/78 201373 Pages: 8 Chinese
  • 申请详细信息:   CN103227204-A CN10112320 01 Apr 2013
  • 优先权号:   CN10112320

▎ 摘  要

NOVELTY - The strip has insulating layer (2) which provided with double-grid (3) that is divided into the top grid (31,32). The insulating layer is provided with the graphene nanometer belt portion (1). The graphene nanometer belt portions are respectively provided with the source electrode (4) and drain electrode (5). The source electrode and drain electrode are respectively provided with the same length of the source region and drain region. The double-grid is located in the middle of the graphite nano-belt portion. USE - Halo-doped double-heterojunction material graphene strip. ADVANTAGE - The performance of the strip can be improved effectively. The high sub-threshold of the strip can be attained. The high frequency characteristics of the grip can be achieved in order to reduce the leakage current. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of the halo-doped double-heterojunction material graphene strip. (Drawing includes non-English language text) Graphene nanometer belt portion (1) Insulating layer (2) Double-grid (3) Source electrode (4) Drain electrode (5) Top grids (31,32)