▎ 摘　　要

NOVELTY - The method involves forming a graphitized metal catalyst thin film on a substrate. A reaction inhibiting layer is formed on the graphitized metal catalyst thin film. A carbon source is arranged to grow graphene nanoribbons. The graphene nanoribbons are grown on the side of the graphitized metal catalyst thin film. A hole is formed through the graphitized metal catalyst thin film and the reaction inhibiting layer formed on the substrate before growing the graphene nanoribbons. USE - Manufacturing method of graphene nanoribbon used for producing semiconductor device (all claimed) such as up gate-type FET. ADVANTAGE - The occurrence of defects of the graphene nanoribbons edge is prevented so that the deterioration of the electrical characteristics of semiconductor device is suppressed. The surface of the graphene nanoribbons constituting the graphene monolayer is in contact with the upper surface of the lower layer where the graphene nanoribbons are located so that the device characteristics of the semiconductor device such as on-current and charge mobility are improved and the occurrence of the short channel effect generated when the semiconductor device is miniaturized is suppressed. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following: (1) a graphene nanoribbon; (2) a method for manufacturing semiconductor device; and (3) a semiconductor device. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view illustrating the manufacturing process of the graphene nanoribbon. (Drawing includes non-English language text)