▎ 摘　　要

NOVELTY - The method involves forming a metal film as a base film of a graphene on a substrate by chemical vapor deposition (CVD) of an organic metal compound using a hydrogen gas and an ammonia gas. The substrate is heated to a temperature at which impurities included in the formed metal film are eliminated as a gas. The substrate is heated to a temperature at which crystal grains of metal are grown in the metal film. The temperature is higher than the temperature at which impurities included in the formed metal film are eliminated as a gas. USE - Forming method of base film for graphene. ADVANTAGE - Improves the smoothness of the metal film as the base film of the graphene since the gas of impurities is prevented from being confined in the metal film according to the growth of crystal grains. Forms high quality graphene by using the metal film. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are also included for the following: (1) a graphene forming method; and (2) an apparatus for forming a base film of a graphene. DESCRIPTION OF DRAWING(S) - The drawing shows the sectional view of the wiring formation process in the graphene forming method. Silicon oxide film (49) Nickel thin film (50) First nickel thin film (50a) Second nickel thin film (50b) High quality graphene (51)