▎ 摘　　要

NOVELTY - A metal oxide solution is prepared by mixing a metal oxide precursor, a graphene, and a solvent, to obtain oxide semiconductor composition. The graphene remains dispersed in the metal oxide solution. The oxide semiconductor composition contains 0.01-30 wt.% metal oxide precursor, 60-99.98 wt.% solvent, and 0.01-10 wt.% graphene with respect to total weight of the oxide semiconductor composition. USE - Manufacture of oxide semiconductor composition used in manufacture of oxide thin-film transistor (claimed) used for liquid crystal display. ADVANTAGE - The method enables efficient manufacture of oxide semiconductor composition with excellent carrier mobility and ductility. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for manufacture of oxide thin-film transistor (100). DESCRIPTION OF DRAWING(S) - The drawing shows the flowchart explaining manufacture of oxide thin-film transistor. Oxide thin-film transistor (100) Substrate (102) Oxide semiconductor material layer (104) Gate insulating layer (GI) Protective layer (PV)