▎ 摘　　要

NOVELTY - An anti-static polishing layer (1) comprises 1-30 wt.% polyurethane prepolymer, 40-96 wt.% abrasive particles, 1-10 wt.% antistatic conductive material, 1-10 wt.% crosslinking agent and 1-10 wt.% porous zirconia. USE - Anti-static polishing layer used in polishing pad for wafer polishing (all claimed). ADVANTAGE - The anti-static polishing layer prevents failure of chemical mechanical polishing (CMP) working system and ensures surface processing quality of wafer, and has excellent application prospect. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following: (1) preparation of the antistatic polishing layer, which involves separately preparing first raw material composition comprising polyurethane prepolymer, second raw material composition comprising curing agent, third raw material composition comprising antistatic conductive material and fourth raw material composition comprising abrasive particles, where first raw material composition is prepared by preheating polyurethane prepolymer in vacuum state and stirring and mixing polyurethane prepolymer, porous zirconia and crosslinking agent, mixing first raw material composition, second raw material composition, third raw material composition and fourth raw material composition to prepare raw material mixture, injecting raw material mixture into mold to solidify, and vulcanizing and slicing; and (2) polishing pad, which includes a substrate layer and the antistatic polishing layer, where the substrate layer comprises an elastic substrate layer (3) and a rigid layer (2) prepared on the elastic substrate layer, the antistatic polishing layer is prepared on the rigid layer, and the antistatic polishing layer and the rigid layer, and the elastic substrate layer and the rigid layer are all bonded by an adhesive (4). DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of the polishing pad. Anti-static polishing layer (1) Rigid layer (2) Elastic substrate layer (3) Adhesive (4)