• 专利标题:   Direct growing of graphene involves arranging substrate in chamber having target surface on which graphene is to be grown, feeding catalyst gas containing carbon-containing compound, and growing graphene layer on target surface.
  • 专利号:   KR2017004106-A
  • 发明人:   LEE J H, SHIN H J, WHANG D M
  • 专利权人:   SAMSUNG ELECTRONICS CO LTD, UNIV SUNGKYUNKWAN RES BUSINESS FOUND
  • 国际专利分类:   B01J023/14, C01B031/04
  • 专利详细信息:   KR2017004106-A 11 Jan 2017 C01B-031/04 201715 Pages: 15
  • 申请详细信息:   KR2017004106-A KR094005 01 Jul 2015
  • 优先权号:   KR094005

▎ 摘  要

NOVELTY - Direct growing of graphene involves arranging a substrate in a chamber having a target surface on which graphene is to be grown, feeding a catalyst gas containing a raw material gas containing a carbon-containing compound and a germanium-containing compound into the chamber, and growing a graphene layer on the target surface. USE - Direct growing of graphene (claimed). ADVANTAGE - The method enables direct growing of graphene without using a metal catalyst layer.