▎ 摘　　要

NOVELTY - The method involves growing the insulating silicon carbide thin film on the substrate by chemical deposition using carbon and the precursor of silicon or iron. The silicon carbide thin-film is doped with vanadium or iron so that the resistance is in the range of 100-1012 ohm-cm. The conductive silicon carbide substrate is pre-processed through etching by heating at the temperature of 1400-1500 degrees C under the gas atmosphere of hydrogen, propane, silane, dichlorosilane or hydrogen chloride. The graphene is grown on the silicon carbide substrate. USE - Method for growing graphene on semi-insulating silicon carbide substrate for laminate structure of electric component of display device (all claimed). Can also be used in LED, power device for electric vehicle and high-speed train, and high-frequency amplifier of mobile communication base station. ADVANTAGE - The physical property of the graphene can be measured after the growth of graphene on the silicon carbide substrate. The cost of the single crystal thin film is reduced. The thickness and resistance of the single crystal thin film can be controlled and the on-off control of the device can be performed exactly. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a laminate structure.