• 专利标题:   Pellicle for extreme ultraviolet lithography, has shadow mask layer pattern that is formed between support layer pattern and central layer by etching mask layer formed between central layer and support layer by using pattern as etch mask.
  • 专利号:   KR2022041363-A, KR2481901-B1
  • 发明人:   LEE C, HONG J H, JEONG M W, PARK C G, YUN J W, LEESEUNGJO, KIM J, LEE H
  • 专利权人:   S S TECH CO LTD
  • 国际专利分类:   G03F001/22, G03F001/64
  • 专利详细信息:   KR2022041363-A 01 Apr 2022 G03F-001/64 202231 Pages: 13
  • 申请详细信息:   KR2022041363-A KR124466 25 Sep 2020
  • 优先权号:   KR124466

▎ 摘  要

NOVELTY - The pellicle has a central layer (10,11) that is composed of a core layer made of nano-particles, a support layer pattern (28a) that is formed by etching the support layer and supports the central layer, and a shadow mask layer formed between the support and central layers using the support pattern as an etch mask. The central layer is made of carbon nanotube, graphite, graphene, boron nitride and shadow mask. A layer pattern comprises single crystal, polycrystalline or amorphous silicon, and silicon compound containing oxygen, carbon, nitrogen, chromium, aluminum, chromium nitride, cobalt, aluminum oxide, tungsten, molybdenum, vanadium, palladium, titanium, platinum, manganese, iron, nickel, cadmium, zirconium, magnesium, lithium, selenium, copper, indium, tin, beryllium, terbium, tantalum, Hydrogen fluoride, niobium, ruthenium, praseodymium, lanthanum, tellurium, rhodium, and europium. USE - Pellicle for extreme ultraviolet lithography. ADVANTAGE - The pellicle has excellent transmittance of 88% or more and uniformity of 0.04% or less. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method of manufacturing a pellicle for extreme ultraviolet lithography. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view showing a pellicle for extreme ultraviolet lithography. Central layer (10,11) Capping layers (12) Pellicle frame (20) Etch stop layer pattern (24a) Support layer pattern (28a)