• 专利标题:   Seed layer for inducing nucleation to form layer of material used for fabricating semiconducting devices, comprises layer of two-dimensional monolayer amorphous material with disordered atomic structure to form electric potential wells for bonding adatoms to seed layer by van der Waals interaction.
  • 专利号:   WO2021183050-A1, KR2022167795-A, CN115551801-A, EP4118034-A1, JP2023516485-W, US2023154747-A1
  • 发明人:   OEZYILMAZ B, TOH C T, ABIDI I H, OJIYLMAZ B, TOH C, ZHUO Z, OZYILMAZ B
  • 专利权人:   UNIV SINGAPORE NAT, UNIV SINGAPORE NAT, UNIV SINGAPORE NAT
  • 国际专利分类:   C01B032/05, C01G039/06, C23C016/26, C23C016/02, C23C016/44, C23C016/48, H01L021/02, H01L031/074, H01L031/109, H01L031/112, H01L031/113, H01L033/00, H01L021/205, H01L021/365
  • 专利详细信息:   WO2021183050-A1 16 Sep 2021 C01B-032/05 202179 Pages: 45 English
  • 申请详细信息:   WO2021183050-A1 WOSG050118 09 Mar 2021
  • 优先权号:   SG10002196, KR735142, CN80033843

▎ 摘  要

NOVELTY - A seed layer for inducing nucleation to form a layer of material, comprises a layer of two-dimensional (2D) monolayer amorphous material having a disordered atomic structure adapted to create localised electronic states to form electric potential wells for bonding adatoms to a surface of the seed layer via van der Waals (vdW) interaction to form the layer of material, where each of the electric potential wells has a potential energy larger in magnitude than surrounding thermal energy to capture adatoms on the surface of the seed layer. USE - The material is used in a heterostructure which is used in a device, such as electronic device, preferably light emitting diodes, infrared (IR) sensors, photodetectors and solar cells. ADVANTAGE - The material has high speed and efficient optoelectronic devices, high energy sites for adsorbing adatoms, has stronger interaction between the adatoms and the surface of the seed layer and a higher nucleation density, and enhanced wettability, is economical and achieves high throughput of large area films. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following: (1) a method for forming the seed layer involving growing the seed layer on a substrate using laser-assisted chemical vapour deposition (LCVD); (2) a heterostructure comprising a substrate and a seed layer formed on the substrate; (3) a device comprising the heterostructure; (4) a method of forming a layer of material on a substrate involving forming a seed layer on the substrate, and forming the layer of material on the seed layer by bonding adatoms of the material to the surface of the seed layer via the (vdW) interaction; and (5) a method for enhancing (vdW) interaction between adatoms and a surface of a seed layer for forming a layer of material on the seed layer.