▎ 摘　　要

NOVELTY - Formation of homoepitaxial tunnel barrier with hydrogenated graphene-on-graphene involves growing graphene via decomposition of methane in a copper foil enclosure, removing the copper foil, transferring and stacking graphene layers, fixing graphene mesas, etching a mask, rinsing and removing the etch mask, fixing reference contacts and bond pads, depositing titanium/gold, encapsulating edges of the graphene layers and a methyl methacrylate/poly(methyl methacrylate) mask, sputter-depositing silicon nitride which is 10 nm, and hydrogenating the graphene. USE - Formation of homoepitaxial tunnel barrier with functionalized graphene-on-graphene used for forming homoepitaxial tunnel barrier transport device (all claimed) e.g. graphene spintronic devices. ADVANTAGE - The method enables simple, effective, efficient and economical formation of the homoepitaxial tunnel barrier having excellent flexibility. The graphene has strong tendency to be very uniform in thickness down to single atom, does not easily form vacancies, and does not intermix readily with other materials such that it has very few defects. DETAILED DESCRIPTION - Formation of homoepitaxial tunnel barrier with hydrogenated graphene-on-graphene involves growing graphene by chemical vapor deposition via decomposition of methane in a copper foil enclosure, removing the copper foil by etching, transferring and stacking graphene layers on a substrate, fixing graphene mesas utilizing deep-UV lithography and an etch mask with poly(methyl methacrylate) and oxygen plasma, rinsing in acetone and isopropyl alcohol and removing the etch mask, fixing reference contacts and bond pads, depositing titanium/gold using electron beam deposition, encapsulating edges of the graphene layers utilizing deep-UV lithography and a methyl methacrylate/poly(methyl methacrylate) mask, sputter-depositing silicon nitride which is 10 nm, and hydrogenating the graphene. INDEPENDENT CLAIMS are included for the following: (1) formation of homoepitaxial tunnel barrier transport device with hydrogenated graphene-on-graphene; and (2) homoepitaxial tunnel barrier transport device with functionalized graphene-on-graphene.