• 专利标题:   Graphene-based piezoresistive effect based pressure sensor, has high-resistance silicon substrate provided with silicon dioxide oxide layer that is formed with triangular cavity, and first metal electrode and second metal electrode fixed at two ends of graphene film.
  • 专利号:   CN210464750-U
  • 发明人:   LI F, WANG X, WANG D
  • 专利权人:   UNIV NANJING POST TELECOM
  • 国际专利分类:   G01L001/18, G01L013/06
  • 专利详细信息:   CN210464750-U 05 May 2020 G01L-001/18 202040 Pages: 9 Chinese
  • 申请详细信息:   CN210464750-U CN21532520 16 Sep 2019
  • 优先权号:   CN21532520

▎ 摘  要

NOVELTY - The utility model claims a graphene-based piezoresistive effect of the pressure sensor, comprising a high-resistance silicon substrate, above the high-resistance silicon substrate provided with a silicon dioxide oxide layer, silicon dioxide oxide layer etching triangular cavity is covered triangle graphene film, graphene film layer number is 1 to 3 layers, at the triangular prism top side length two endpoints of etching metal electrode. When the graphite film subjected to stress or film with a pressure difference, graphene is deformed, The graphene piezoresistive effect, the resistance is changed by detecting the graphene resistor, so as to realize the detection of pressure or pressure difference. The system has novel structure, and it can be applied to complex environment such as mountain gap with small volume, large amplitude range of measurement, with high stability and very high sensitivity, small size, easy to integrate, and wide application range.