▎ 摘　　要

NOVELTY - Preparing a graphene structure of 1-5 layers or controlling the number of layers, involves: (a) introducing a common substrate or a substrate with powdered metal or a substrate with a definite pattern of a metal inside a reactor to undertake a process of chemical vapor deposition (CVD), or in furnace for CVD; (b) introducing a carbon precursor gas either within the reactor or within the furnace of CVD with a synchronized pulse sequence; and (c) lowering the temperature to room temperature, optionally in the presence of a controlled atmosphere. USE - The method or device is useful for preparing graphene structure of 1-5 layers or controlling the number of layers (claimed). ADVANTAGE - The method can produce graphene on an industrial scale with high quality and without transferring step. DETAILED DESCRIPTION - Preparing a graphene structure of 1-5 layers, or controlling the number of layers, involves: (a) introducing a common substrate or a substrate with powdered metal or a substrate with a definite pattern of a metal inside a reactor to undertake a process of chemical vapor deposition (CVD), or in furnace for CVD, followed by reducing the pressure to 104-10-5 Pa, and then raising the temperature until the substrate reaches a temperature of 500-1050 degrees C; (b) introducing a carbon precursor gas either within the reactor or within the furnace of CVD with a synchronized pulse sequence; optionally in the presence of a reduced atmosphere to form a layer of graphene; and (c) lowering the temperature to room temperature, optionally in the presence of a controlled atmosphere. An INDEPENDENT CLAIM is included for a device for CVD arranged to perform the steps of the method comprising: (a) either a reactor arranged to carry out a process of CVD and a method of sputtering in situ, or a high vacuum chamber arranged to carry out the sputtering process, coupled by via a horizontal quartz tube to a furnace of CVD arranged to carry out a process of CVD; and (b) a gas management system arranged to control the partial pressure of gas necessary for each process, CVD and sputtering, and for controlling the introduction of carbon gas precursor during the CVD process; where the gas management system comprises a gas injection system comprising at least one sequence of 4 valves in series (2 + 2) with a depressurization chamber between them, each controlled way valve is independent since they are connected to independent vacuum systems.