▎ 摘　　要

NOVELTY - The method involves setting a double-layer graphene band gap between a first molecular layer and a second molecular layer. The first molecular sheet is used to perform electronic doping of the double graphene and the second molecular sheet to perform hole-doping of the dual graphene to form a double graphene band gaps. The double graphene is arranged between the first molecular layers. USE - Method for opening a double-layer graphene band gap in a semiconductor device and nano-electro-mechanical system (MEMS) device. ADVANTAGE - The method enables opening a double-layer graphene band gap in the semiconductor device with convenient operation, simple device structure, and wide application, and avoiding traditional electric grid voltage control method of micro-nano processing process for applying the double-layer graphene to the semiconductor electronic device field, and avoiding pollution of the organic residue to affect material properties. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a double-layer graphene device. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of a double-layer graphene device. 10Functional substrate 11Silicon substrate 12Silicon dioxide layer 13First molecular layer