▎ 摘　　要

NOVELTY - Preparation of graphene semiconductor shielding material, involves ultrasonically processing graphene nanosheet at 20-25 kHz and 70-90% power for 15-30 minutes to obtain aqueous solution, adding ethylene-vinyl acetate emulsion, stirring at 300-500 rpm for 30-60 minutes to obtain a flocculent mixture material, washing the material with deionized water, filtering, vacuum-freeze-drying to obtain a graphene semiconductor shielding material masterbatch, milling and mixing the masterbatch for 10-15 hours, and pressure-vulcanizing at 160-180 degrees C and 8-15 MPa. USE - Preparation of graphene semiconductor shielding material for high-pressure electric power cables. ADVANTAGE - The method enables simple and economical preparation of graphene semiconductor shielding material, with reduced energy consumption and easy process control. The obtained graphene semiconductor shielding material has low density, and excellent semiconductive performance, high-pressure resistance, tensile strength, smoothness, and water resistance.