▎ 摘　　要

NOVELTY - A graphene layer (10) is formed on a semiconductor and carbon-containing substrate (5), and a metal-containing monolayer (15) is deposited on the graphene layer. An epitaxial layer (25) of gallium-containing material is formed on the metal-containing monolayer, a layered stack of the metal-containing monolayer and epitaxial layer of the gallium-containing material are cleaved from graphene layer, to obtain semiconductor material. USE - Preparation of semiconductor material used for forming semiconductor layer in semiconductor device e.g. LED e.g. blue LED used in optical recordings, and white LED, bio-agent elimination e.g. water purification and sanitation, secure communication applications e.g. devices for satellite to satellite communication, and defense applications e.g. devices for terrestrial and aerial countermeasure. ADVANTAGE - The method enables preparation of semiconductor material having excellent thermal conductivity, breakdown voltage, and piezoelectric effects, and low intrinsic carrier density, leakage and dark current. The semiconductor device obtained using the semiconductor material has excellent electrical performance and durability. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for formation of semiconductor layer(s). DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of epitaxial gallium nitride layer on buffer layer. Carbon-containing substrate (5) Graphene layer (10) Metal-containing monolayer (15) Buffer layer (20) Epitaxial layer (25)