• 专利标题:   UV light sculpture drying method for preparing graphite quantum point film, involves obtaining oxidized graphene by coating and drying graphene solution on chip, and obtaining graphite quantum point film by utilizing UV light to irradiate.
  • 专利号:   CN102208755-A
  • 发明人:   CUI D, SHEN G, YANG H, ZHANG J
  • 专利权人:   UNIV SHANGHAI JIAOTONG
  • 国际专利分类:   B82Y020/00, B82Y040/00, H01S005/34
  • 专利详细信息:   CN102208755-A 05 Oct 2011 H01S-005/34 201176 Pages: 7 Chinese
  • 申请详细信息:   CN102208755-A CN10109954 29 Apr 2011
  • 优先权号:   CN10109954

▎ 摘  要

NOVELTY - The method involves obtaining an oxidized graphene/mica film by rotationally coating and drying a graphene solution on a mica chip. A monolayer graphite quantum point film is obtained by utilizing UV light to irradiate. The graphene solution is obtained through dispersing graphite oxide in de-ionized water and separated by ultrasonic dispersion processing. Distance between the graphene oxide/mica film and a light path of an UV lamp is 5-10 cm, where power and wavelength of the UV lamp is 80-200W and 275nm or 372nm, respectively. USE - UV light sculpture drying method for preparing a graphite quantum point film (claimed). DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a graphite quantum point film. DESCRIPTION OF DRAWING(S) - The drawing shows a photographical view of an UV light sculpture drying method.