▎ 摘　　要

NOVELTY - The structure has a semiconductor light waveguide layer (12) fixed with first and second ridge parts (13,14). The first ridge part is fixed with first and second graphene (41,42). The second ridge part is fixed with third and fourth graphene (43,44). The first and second ridge parts are extended by first metal electrode (51). The first and second graphenes are fixed with the third and fourth graphene. The first and second metal electrodes (52) are formed with a gap using a U-shaped first and second fill medium (22,23), where first and second ridge parts are made of silicon and germanium alloy. USE - Four layer graphene combined Light modulator structure. ADVANTAGE - The structure has small volume, high rate and integrated structure. DETAILED DESCRIPTION - The first and second fill medium are made of semiconductor oxide material, where semiconductor oxide material is silicon oxide, silicon nitride oxide, boron nitride and hexagonal boron nitride. The first and second metal electrodes are made of gold, silver, copper, molybdenum, titanium, nickel, cobalt and button material. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of a four layer graphene combined Light modulator structure. Semiconductor light waveguide layer (12) First and second ridge parts (13,14) U-shaped first and second fill mediums (22,23) First and second graphenes (41,42) Third and fourth graphenes (43,44) First and second metal electrodes (51,52)