• 专利标题:   Multi-grid graphene field-effect transistor sensor array comprises sensors composed of drain electrode, source electrode and multiple gate electrodes, where each sensor comprises sputtering and depositing patterned source electrode and drain electrode on glass substrate.
  • 专利号:   CN114624309-A
  • 发明人:   MAO Y, WANG R, WANG Y, QU H, ZHENG L
  • 专利权人:   UNIV HEFEI TECHNOLOGY
  • 国际专利分类:   G01N027/414
  • 专利详细信息:   CN114624309-A 14 Jun 2022 G01N-027/414 202258 Chinese
  • 申请详细信息:   CN114624309-A CN10221633 07 Mar 2022
  • 优先权号:   CN10221633

▎ 摘  要

NOVELTY - Multi-grid graphene field-effect transistor sensor array comprises multiple sensors, where each sensor is composed of a drain electrode, a source electrode and multiple gate electrodes. Each sensor is provided with a sputtering and depositing patterned source electrode and drain electrode on the glass substrate, a vapor deposition single-layer graphene channel, and a gate electrode modified by different functional materials. USE - The method is useful for preparing multi-gate graphene field effect transistor sensor array, which is useful in a sensor array device for detecting food quality and safety. ADVANTAGE - The multi-gate graphene field-effect transistor sensor array has improved performance. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are also included for: (1) preparation method of a multi-gate graphene field effect transistor sensor array; and (2) multiple detection method of the multi-gate graphene field effect transistor sensor array. DESCRIPTION OF DRAWING(S) - The drawing shows a solution-gated graphene transistors (SGGT)sensor with multiple gate electrodes. (Drawing includes non-English language text).