▎ 摘　　要

NOVELTY - The battery has a single crystal silicon layer (3) whose surface is covered with a graphene thin film (1). A junction of a Schottky diode is covered with a low-doped polycrystalline silicon thin film (4) to form a PN junction (10) that is located between an N-type polycrystalline silicon thin film and a P-type polycrystalline silicon thin film. A high-doped polycrystalline silicon thin film is covered between a Schottky diode junction and the PN junction and covered on a tunnel junction. Concentration of the high-doped polycrystalline silicon thin film is greater than or equal to 11Vcm3. USE - Graphite-alkene dual-structure solar energy battery. ADVANTAGE - The battery can reduce reverse open-circuit voltage so as to improve separating and collecting efficiency of a photon-generated carrier, so that photoelectric conversion efficiency of the battery can be improved. DETAILED DESCRIPTION - The battery utilizes an electric conduction film (7) that is made of copper, silver, aluminum, zinc oxide and indium-tin-oxide. An INDEPENDENT CLAIM is also included for a graphite-alkene dual-structure solar energy battery manufacturing method. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of a graphite-alkene dual-structure solar energy battery. Graphene thin film (1) Single crystal silicon layer (3) Low-doped polycrystalline silicon thin film (4) Electric conduction film (7)