▎ 摘　　要

NOVELTY - A carbon source is located at, or in a vicinity of, the surface (20) of a substrate. The ambient conditions at the surface are controlled to inhibit graphene nucleation on the surface. A temporary change of ambient condition(s) is applied at a localized site (30) on the surface to initiate graphene nucleation at the site. The ambient conditions at the surface are controlled, following initiation of graphene nucleation at the localized site, to simultaneously inhibit graphene nucleation and enable graphene (32) growth on the surface. USE - Formation of graphene film on surface of substrate. Uses include but are not limited to fast and flexible electronics, lasers, biosensors, atomically thin protective coatings, hydrogen storage applications, and hydrogen storage applications. ADVANTAGE - The method enables formation of large films of high-quality graphene on the surface of substrate through control of ambient conditions at the surface. Control of graphene nucleation on the surface of the substrate is used to restrict the number of graphene nuclei on the surface and/or control the placement of graphene nuclei on the surface to create relatively large distances between neighboring graphene nuclei. These restrictions in the number and placement is used to limit the number of graphene domains formed on the surface. This in turn reduces the number of domain boundaries, and hence the overall number of defects, in the resultant graphene film. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of a stable graphene nucleus which is formed on the surface. Surface (20) Ethylene molecules (22) Carbon atoms (24) Localized site (30) Graphene (32)