▎ 摘　　要

NOVELTY - The heterojunction diode has a first semiconductor layer (100) that is a semiconductor. A two-dimensional thin-film material is formed on the first semiconductor layer and second semiconductor layer (300). A second semiconducting layer is laminated on the two-dimension thin film insertion layer. The first and the second semicconducting layers are made of silicon carbide, graphene and gallium oxide. A lower electrode (500) is made of aluminum. The lower electrode has a thickness of 20 nm or more and an aluminum layer that are sequentially provided on the second and third semiconductive layers. An upper electrode (400) is provided with a titanium layer and a gallium nitride layer. USE - Heterojunction diode using two-dimensional thin-film insertion layer. ADVANTAGE - The deterioration of physical properties due to the defects can be minimized. The change in the physical properties of the diode can be prevented. The two-dimensional thin-film insertion layer can be formed without a deposition process. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a heterojunction diode manufacturing method. DESCRIPTION OF DRAWING(S) - The drawing shows a perspective view of a heterojunction diode using a two-dimensional thin-film insertion layer. First semiconductor layer (100) Two-dimensional thin-film insertion layer (200) Second semiconductor layer (300) Upper electrode (400) Lower electrode (500)