▎ 摘　　要

NOVELTY - A graphene memristor (180) comprises: first electrode (110); second electrode (120) electrically coupled to the first electrode; an active region interspersed between the two electrodes; a defective graphene structure that modulates a barrier height to migration of ions through the active region; fast diffusing ions that migrate under the influence an electric field to change a state of the graphene memristor; and a source that generates the electric field. USE - As a graphene memristor (claimed), used as switches in electronic circuits and as non-volatile memory, which are used in nano-electronic memories, in computer logic and neuromorphinic computer architectures (e.g. very large scale integration (VLSI) systems containing electronic analog circuits that mimic neuro-biological architectures present in the nervous system) and analog, digital or mixed-mode analog/digital VLSI systems that implement models of neural systems (for perception, motor control, or sensory processing) and software algorithms. ADVANTAGE - The memristor has good switching performance (i.e. switching speed), endurance and retention time. DETAILED DESCRIPTION - A graphene memristor (180) comprises: first electrode (110); second electrode (120) electrically coupled to the first electrode; an active region interspersed between the two electrodes; a defective graphene structure (300) that modulates a barrier height to migration of ions through the active region; fast diffusing ions that migrate under the influence an electric field to change a state of the graphene memristor; and a source that generates the electric field. The defective graphene structure comprises a graphene layer having at least one engineered defect. The engineered defects comprise at least one interstitial atom and removed carbon atom. The source that generates the electric field comprises a gate electrode. The defective graphene structure is interposed between the gate electrode and the active region. The graphene memristor comprises graphene structure that modulates ion conductance in the active region, where the voltage source provides a potential for the ion conduction. An INDEPENDENT CLAIM is included for a nano-scale graphene memristor, comprising: first electrode; second electrode; and unit for switching the memristor from an OFF state to an ON state, where the nano-scale graphene memristor remains in a most recent one of the OFF state and the ON state when the potential is removed from the graphene memristor. DESCRIPTION OF DRAWING(S) - The figure shows nanoscale memristor that uses an exemplary grapheme structure. First electrode (110) Second electrode (120) Voltage source (150) Graphene memristor (180) Graphene structure (190) Defective graphene structure (300) Defect-free graphene layer (305) Gap (310)