• 专利标题:   Manufacturing transition metal dichalcogenide-graphene heterojunction electrode comprises transferring graphene to electrode, depositing transition metal layer on graphene-transferred electrode and injecting plasma-treated sulfur gas.
  • 专利号:   KR2021138928-A
  • 发明人:   KIM T S, SEOK H H, LEE I, WOO K H
  • 专利权人:   UNIV SUNGKYUNKWAN RES BUSINESS FOUND
  • 国际专利分类:   C25B011/04, B01J021/18, B01J027/047, C23C014/18, C23C014/58, C23C016/56, C25B001/04
  • 专利详细信息:   KR2021138928-A 22 Nov 2021 C25B-011/04 202104 Pages: 15
  • 申请详细信息:   KR2021138928-A KR056993 13 May 2020
  • 优先权号:   KR056993

▎ 摘  要

NOVELTY - Manufacturing transition metal dichalcogenide-graphene heterojunction electrode comprises transferring graphene onto the electrode, depositing a transition metal layer on the graphene-transferred electrode and injecting a gas containing plasma-treated sulfur (S) onto the electrode on which the transition metal layer is deposited. USE - The method is useful for manufacturing transition metal dichalcogenide-graphene heterojunction electrode. ADVANTAGE - The method significantly reduces electrical performance or catalyst performance; It is possible to provide a transition metal dichalcogenide-graphene heterojunction electrode having a continuous interface because there is no foreign material generated during transfer by directly synthesizing the nide-graphene heterojunction and heterojunction is uniformly at all interfaces; and good reproducibility, process is simple, and economical; has high conductivity of graphene. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for catalysts for hydrogen evolution (HER), comprising a graphene heterojunction electrode.