▎ 摘　　要

NOVELTY - Depositing film, involves (a) preparing a non-planar substrate, comprises a first surface, a second surface and an inclined surface between the first surface and the second surface, a height of the second surface being different than height of the first surface, (b) depositing a film having a thickness deviation on the first surface, the second surface, and the inclined surface, and (c) etching the film deposited on first surface, second surface, and inclined surface. USE - Method for depositing film, used in semiconductor element (claimed). ADVANTAGE - The method improves reliability of elements, and increases degree of miniaturization in semiconductor processes. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for: A film deposition method, which involves: preparing a substrate comprising a micro pattern; forming a film on the micro pattern, where film comprises a material; and adjusting a thickness of the film to be equal to or less than a given distance from the micro pattern. A semiconductor element, which comprises a non-planar substrate, and one non-planar film on the non-planar substrate, where one of one non-planar film has a thickness variation of 10% or less.